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Variable‐energy positron lifetime study of silicon‐oxide films plasma deposited from hexamethyldisiloxane and oxygen mixtures
Author(s) -
Wang C. L.,
Kobayashi Y.,
Togashi H.,
Hirata K.,
Suzuki R.,
Ohdaira T.,
Mikado T.,
Hishita S.
Publication year - 2000
Publication title -
journal of applied polymer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.575
H-Index - 166
eISSN - 1097-4628
pISSN - 0021-8995
DOI - 10.1002/1097-4628(20010207)79:6<974::aid-app30>3.0.co;2-d
Subject(s) - hexamethyldisiloxane , x ray photoelectron spectroscopy , analytical chemistry (journal) , silicon oxide , oxygen , materials science , annealing (glass) , thin film , positron annihilation spectroscopy , plasma , silicon , chemistry , positron , nanotechnology , nuclear magnetic resonance , positron annihilation , composite material , organic chemistry , physics , electron , silicon nitride , quantum mechanics , metallurgy
Mixtures of hexamethyldisiloxane [HMDSiO, (CH 3 ) 3 SiOSi(CH 3 ) 3 ] and oxygen are plasma polymerized at different oxygen pressures ( P O 2= 1.3–11.4 Pa) and a fixed monomer pressure ( P m = 2.6 Pa). The discharge power is kept at 100 W throughout the work. Nanometer‐size holes in the deposited films are characterized by variable‐energy positron annihilation lifetime spectroscopy (PALS). Additional information on the film composition and structure is obtained by X‐ray photoelectron spectroscopy and IR absorption spectroscopy. The ortho ‐positronium lifetime τ 3 and intensity I 3 increase with the P O 2up to 6.2 Pa and then decrease with the P O 2. PALS measurements after annealing at 400°C show that films prepared at high oxygen pressure have a less stable structure than a film deposited at a lower oxygen pressure. These results are discussed in comparison with plasma deposition of pure HMDSiO, as are the possible effects of oxygen radicals on the film structure. © 2000 John Wiley & Sons, Inc. J Appl Polym Sci 79: 974–980, 2001