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Growth and characterization of fluorocarbon thin films grown from trifluoromethane (CHF 3 ) using pulsed‐plasma enhanced CVD
Author(s) -
Winder Edmund J.,
Gleason Karen K.
Publication year - 2000
Publication title -
journal of applied polymer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.575
H-Index - 166
eISSN - 1097-4628
pISSN - 0021-8995
DOI - 10.1002/1097-4628(20001024)78:4<842::aid-app180>3.0.co;2-j
Subject(s) - x ray photoelectron spectroscopy , fluorocarbon , thin film , substrate (aquarium) , plasma , materials science , deposition (geology) , analytical chemistry (journal) , fourier transform infrared spectroscopy , chemical engineering , duty cycle , chemistry , nanotechnology , composite material , organic chemistry , voltage , electrical engineering , paleontology , oceanography , physics , quantum mechanics , sediment , geology , engineering , biology
Trifluoromethane (CHF 3 ) was used as a precursor gas in pulsed‐plasma enhanced CVD to deposit fluorocarbon films onto Si substrates. The film composition, as measured by X‐ray photoelectron spectroscopy (XPS) of the C 1 s peak, was observed to change as the plasma duty cycle was changed by varying the plasma off‐time; this offers a route to control the molecular architecture of deposited films. FTIR results indicate that the film is primarily composed of CF x components, with little or no CH incorporation into the film. The rms roughness of the films is extremely low, approaching that of the Si substrate; the low growth rate and consequent high‐power input/thickness is believed to be partly responsible. CHF 3 produces films with higher % CF 2 compared to other hydrofluorocompound (HFC) monomers (CH 2 F 2 and C 2 H 2 F 4 ). However, the deposition kinetics for all three HFC gases display similar trends. In particular, at a fixed on‐time of 10 ms, the deposition rate per pulse cycle reaches a maximum at an off‐time of approximately 100 ms. © 2000 John Wiley & Sons, Inc. J Appl Polym Sci 78: 842–849, 2000