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Kinetics of Si 2 H 2 produced by the 193 nm photolysis of disilane
Author(s) -
Nakajima Yoshiki,
Tonokura Kenichi,
Sugimoto Kazuko,
Koshi Mitsuo
Publication year - 2001
Publication title -
international journal of chemical kinetics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.341
H-Index - 68
eISSN - 1097-4601
pISSN - 0538-8066
DOI - 10.1002/1097-4601(200102)33:2<136::aid-kin1006>3.0.co;2-h
Subject(s) - chemistry , disilane , photoionization , torr , photodissociation , excimer , kinetics , excimer laser , reaction rate constant , mass spectrometry , analytical chemistry (journal) , total pressure , photochemistry , laser , ionization , organic chemistry , ion , chromatography , optics , quantum mechanics , thermodynamics , physics , silane
Si 2 H 2 species were produced through the 193 nm excimer laser photolysis of Si 2 H 6 . Time‐resolved photoionization mass spectrometry was employed to study the reaction kinetics of Si 2 H 2 . The lower limit of self‐reaction of Si 2 H 2 was estimated, k (Si 2 H 2 + Si 2 H 2 ) ≥ (1.7 ± 0.5) × 10 −10 cm 3 molecule −1 s −1 , through analysis of the decay traces. This rate constant was independent of a total pressure on the entire pressure range ( p total = 1–7 Torr). No reaction of Si 2 H 2 with H 2 , CH 4 , SiH 4 , and Si 2 H 6 was confirmed. The decay rates of Si 2 H 2 reacting with O 2 , NO, and HCl exhibit negative dependence on the total pressure. © 2001 John Wiley & Sons, Inc. Int J Chem Kinet 33: 136–141, 2001