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Raman characterization of GaN synthesized by N implantation in GaAs substrate
Author(s) -
Boudart B.,
Pesant J. C.,
de Jaeger J. C.,
Dhamelincourt P. A.
Publication year - 2000
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/1097-4555(200007)31:7<615::aid-jrs585>3.0.co;2-5
Subject(s) - raman spectroscopy , annealing (glass) , materials science , ion implantation , substrate (aquarium) , optoelectronics , analytical chemistry (journal) , characterization (materials science) , ion , nanotechnology , chemistry , metallurgy , optics , chromatography , physics , oceanography , organic chemistry , geology
GaN material was synthesized by implantation of N ion into a GaAs (001) semi‐insulating substrate. After implantation, different annealing treatments were applied and the results were investigated using UV Raman spectroscopy. More particularly, temperature and time treatments ranging between 500 and 950 ° C and 1 and 20 min, respectively, were studied. The results of these studies showed that, by using appropriate annealing conditions, a high‐quality GaN crystalline layer can be obtained on GaAs substrates. Copyright © 2000 John Wiley & Sons, Ltd.