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Interfacial diffusion in a double quantum well structure
Author(s) -
Sarkar S.,
Chakraborty P.,
Sanyal M. K.,
Caccavale F.,
Arora B. M.
Publication year - 2000
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/1096-9918(200010)29:10<659::aid-sia917>3.0.co;2-#
Subject(s) - diffusion , chemical physics , materials science , quantum well , chemistry , crystallography , physics , thermodynamics , optics , laser
We have studied interdiffusion processes occurring in a metal organic chemical vapour deposition (MOCVD) grown InP/In 0.33 Ga 0.67 As/InP/In 0.33 Ga 0.67 As/InP double quantum well structure through secondary ion mass spectrometry and high‐resolution x‐ray diffraction measurements along with a simulation programme. Results show an interdiffusion of phosphorus into the quantum wells and the presence of a 10 nm thick intermixed zone of In, As and P formed in‐between the cap layer and the subsequent quantum well. Combination of these two techniques along with the simulation is a novel approach towards the understanding and quantification of in‐depth compositional variation in thin films, in general. Copyright © 2000 John Wiley & Sons, Ltd.