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Tantalum nitride formation by low‐energy (0.5–5 keV) nitrogen implantation
Author(s) -
Arranz A.,
Palacio C.
Publication year - 2000
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/1096-9918(200010)29:10<653::aid-sia913>3.0.co;2-t
Subject(s) - x ray photoelectron spectroscopy , tantalum , nitrogen , tantalum nitride , nitride , analytical chemistry (journal) , materials science , ion implantation , valence (chemistry) , ion , chemistry , nanotechnology , metallurgy , chemical engineering , layer (electronics) , organic chemistry , engineering , chromatography
The formation of TaN x films by in situ nitrogen implantation with energies from 0.5 to 5 keV has been investigated in a wide compositional range (0 ≤ × ≤ 0.92). X‐ray photoelectron spectroscopy (XPS) and valence band x‐ray photoelectron spectroscopy (VBXPS) have been used to characterize the chemical composition and electronic structure of the films. The XPS results show that nitrogen composition is dependent on both the ion dose and ion energy. For a given energy the nitrogen composition increases with increasing ion dose. The composition range obtained is consistent with a transformation of tantalum nitride from β‐TaN 0.05 + γ‐Ta 2 N to cubic TaN x + δ‐TaN. The VBXPS results indicate a charge transfer from Ta 5d to N 2p bands, and a decrease in the nitrogen vacancies concentration during the nitridation process. Copyright © 2000 John Wiley & Sons, Ltd.