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Electron spectroscopy of single‐phase (Al,B)N films
Author(s) -
Witthaut Mirjam,
Cremer Rainer,
Neuschütz Dieter
Publication year - 2000
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/1096-9918(200008)30:1<580::aid-sia847>3.0.co;2-3
Subject(s) - auger electron spectroscopy , wurtzite crystal structure , x ray photoelectron spectroscopy , crystallography , electron diffraction , materials science , reflection high energy electron diffraction , boron nitride , electron spectroscopy , electron energy loss spectroscopy , phase (matter) , nitride , analytical chemistry (journal) , chemistry , diffraction , nanotechnology , transmission electron microscopy , nuclear magnetic resonance , layer (electronics) , physics , chromatography , hexagonal crystal system , nuclear physics , optics , organic chemistry
In the present paper the metastable solid solubility between BN and AlN in the wurtzite structure of AlN has been investigated. Ternary Al–B–N films as well as the binaries AlN and BN have been deposited by reactive magnetron sputtering on Si(111) wafers. The composition, binding states of the components, electronic structure, crystallographic structure and texture of the films have been analysed by means of XPS, x‐ray‐induced Auger electron spectroscopy (XAES), electron energy‐loss spectroscopy (EELS), x‐ray diffraction (XRD) and reflection high‐energy electron diffraction (RHEED). Up to a BN content of 33 mol.%, all films were deposited strongly textured in the single‐phase sp 3 ‐bonded wurtzite structure of AlN. At higher boron nitride contents up to 68 mol.%, the films were still sp 3 ‐bonded but the binding states differed from those of the more AlN rich films. Only a pure BN film exhibited sp 2 bondings, corresponding to the stable hexagonalBN modification in graphite‐like structure. Copyright © 2000 John Wiley & Sons, Ltd.