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XPS analysis with depth resolution of chemical bath‐deposited ZnSe thin films
Author(s) -
Chaparro A. M.,
Maffiotte C.,
Herrero J.,
Gutiérrez M. T.
Publication year - 2000
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/1096-9918(200008)30:1<522::aid-sia746>3.0.co;2-9
Subject(s) - x ray photoelectron spectroscopy , thin film , photoelectric effect , substrate (aquarium) , chemical composition , chemical bath deposition , sputtering , analytical chemistry (journal) , materials science , deposition (geology) , chemistry , chemical engineering , nanotechnology , optoelectronics , paleontology , oceanography , organic chemistry , chromatography , sediment , geology , engineering , biology
X‐ray photoelectron spectroscopy analysis of ZnSe thin films deposited by the chemical bath deposition method is carried out. The composition of the films at the surface and subsurface is determined by angle‐resolved XPS detection of photoelectrons, and the elemental profile in the whole depth is determined by sputter‐assisted XPS. In general, the films are composed of a mixture of ZnSe and ZnO (or Zn(OH) 2 for non‐annealed films), the relative proportions of which vary depending on the substrate properties and thermal treatments. Also, inhomogeneous depth composition is encountered, the films richer in ZnO being close to the film/substrate interface, with increasing ZnSe proportion above. This result is explained in relation to the mechanisms that contribute to film growth in the chemical bath. The characteristic composition of the films is expected to influence their behaviour as buffer layers for photovoltaic thin‐film solar cells. Copyright © 2000 John Wiley & Sons, Ltd.