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Structure of epitaxial Gd 2 O 3 films and their registry on GaAs(100) substrates
Author(s) -
Bolliger B.,
Erbudak M.,
Hong M.,
Kwo J.,
Kortan A. R.,
Mannaerts J. P.
Publication year - 2000
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/1096-9918(200008)30:1<514::aid-sia760>3.0.co;2-k
Subject(s) - epitaxy , substrate (aquarium) , sputtering , materials science , crystallography , molecular beam epitaxy , ion , crystal structure , optoelectronics , thin film , layer (electronics) , chemistry , nanotechnology , geology , oceanography , organic chemistry
The structure and alignment of epitaxial molecular‐beam‐epitaxy‐grown single‐crystal Gd 2 O 3 films on GaAs(100) are studied using secondary electron imaging. We have found that the 115 Å thick Gd 2 O 3 film has a cubic structure. The [110] axis is aligned perfectly with the surface normal of the substrate. The secondary electron patterns are recorded during sequential sputtering with 1000 eV Ne + ions. They show that the [001] and [ 1 10] directions of the film overlap with the [011] and [01 1 ] directions of the substrate with a high degree of site registry of atoms at the interface. Copyright © 2000 John Wiley & Sons, Ltd.