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Medium‐energy ion scattering spectroscopy for quantitative surface and near‐surface analysis of ultrathin films
Author(s) -
Moon D. W.,
Kim K. J.,
Park Y.,
Kim H. K.,
Ha Y. H.,
Oh D. H.,
Kang H. J.
Publication year - 2000
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/1096-9918(200008)30:1<484::aid-sia828>3.0.co;2-u
Subject(s) - sputtering , x ray photoelectron spectroscopy , scattering , spectroscopy , analytical chemistry (journal) , ion , materials science , low energy ion scattering , surface (topology) , resolution (logic) , surface layer , inductively coupled plasma , layer (electronics) , plasma , chemistry , thin film , optics , nanotechnology , physics , nuclear magnetic resonance , geometry , mathematics , organic chemistry , quantum mechanics , chromatography , artificial intelligence , computer science
Medium‐energy Ion Scattering Spectroscopy (MEISS) can provide non‐destructive quantitative surface and near‐surface composition with atomic layer depth resolution. The special features of MEISS can be utilized to improve quantification of conventional surface analysis techniques by studying preferential sputtering, which is one of the major problems in quantitative surface analysis using sputtering techniques. This phenomenon was studied in detail with MEISS, in situ and ex situ XPS analysis, RBS, and (inductively coupled plasma optical emission spectrometry) for WSi 2 . Copyright © 2000 John Wiley & Sons, Ltd.