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Effects of selenium surface segregation on the texture of a selenium‐doped FeSi alloy
Author(s) -
Jenko M.,
Fine J.,
Mandrino D.
Publication year - 2000
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/1096-9918(200008)30:1<350::aid-sia743>3.0.co;2-r
Subject(s) - auger electron spectroscopy , selenium , alloy , x ray photoelectron spectroscopy , impurity , materials science , doping , microstructure , texture (cosmology) , analytical chemistry (journal) , spectroscopy , metallurgy , auger , chemistry , chemical engineering , atomic physics , physics , optoelectronics , organic chemistry , chromatography , quantum mechanics , artificial intelligence , computer science , nuclear physics , engineering , image (mathematics)
Abstract High‐resolution Auger electron spectroscopy has been used to study selenium surface segregation on an Se‐doped FeSi alloy. The surface segregation of Se and impurities such as C, P and S was measured in situ in the analysis chamber of an Auger spectrometer under ultrahigh vacuum conditions in the temperature range 200–850 °C. At elevated temperatures ( T ≥850 °C), co‐segregation of Se and S was observed to occur by means of x‐ray photoelectron spectroscopy. It was also found that the surface segregation of selenium critically affected reconstruction of the (110) surface microstructure of the FeSi alloy, resulting in the formation of (100) planes at 850 °C. Copyright © 2000 John Wiley & Sons, Ltd.