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Interfacial phenomena during depth profiling with gallium ions: a ToF‐SIMS approach
Author(s) -
Licciardello Antonino,
Renna Lucio,
Pignataro Salvatore
Publication year - 2000
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/1096-9918(200008)30:1<243::aid-sia754>3.0.co;2-i
Subject(s) - gallium , sputtering , ion , secondary ion mass spectrometry , analytical chemistry (journal) , yield (engineering) , ion beam , profiling (computer programming) , beam (structure) , chemistry , ion beam analysis , materials science , thin film , optics , metallurgy , nanotechnology , physics , computer science , organic chemistry , chromatography , operating system
Time‐of‐flight SIMS profiles have been obtained on an SiO 2 /Si system. A dual ion beam experimental set‐up has been used in order to decouple the erosion process due to an Ar + beam from the analysis done by a Ga + beam. The Ga + yield shows a characteristic double‐peaked structure at the SiO 2 /Si interface. It is shown that the peak at shallower depth can be accounted for by a change in sputtering rate, whereas that located at the interface can be interpreted in terms of gallium segregation. Copyright © 2000 John Wiley & Sons, Ltd.