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Measurements of the escape probability of photoelectrons and the inelastic mean free path in silver sulphide
Author(s) -
Zemek J.,
Jiricek P.,
Hucek S.,
Lesiak B.,
Jablonski A.
Publication year - 2000
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/1096-9918(200008)30:1<222::aid-sia769>3.0.co;2-7
Subject(s) - inelastic mean free path , photoelectric effect , mean free path , range (aeronautics) , atomic physics , inelastic collision , monotonic function , chemistry , electron , exponential function , physics , flux (metallurgy) , free electron model , molecular physics , optics , materials science , quantum mechanics , mathematics , mathematical analysis , organic chemistry , composite material
The escape probabilities of S 2s and S 2p photoelectrons leaving an Ag 2 S surface in a direction parallel to the photon flux and the inelastic mean free path values in the range 200–1600 eV have been determined experimentally. The escape probability as a function of depth of origin for the S 2s photoelectrons exhibits non‐monotonic behaviour, with a maximum at a depth of 0.6–0.8 nm. In contrast, the escape probability of the S 2p photoelectrons leaving the surface in the same direction can be approximated by an exponential function. The inelastic mean free path values determined by elastic peak electron spectroscopy agree well with the values resulting from the G1 predictive formula of Gries. Copyright © 2000 John Wiley & Sons, Ltd.