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Reactions in TiO 2 /Ti 3 Al and TiO 2 /TiAl bilayers: application of target‐factor analysis in Auger electron spectroscopy
Author(s) -
van Lier J.,
Baretzky B.,
Zalar A.,
Mittemeijer E. J.
Publication year - 2000
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/1096-9918(200008)30:1<124::aid-sia848>3.0.co;2-6
Subject(s) - auger electron spectroscopy , bilayer , oxygen , auger , titanium , materials science , diffusion , layer (electronics) , analytical chemistry (journal) , x ray photoelectron spectroscopy , electron spectroscopy , chemistry , metallurgy , chemical engineering , atomic physics , nanotechnology , thermodynamics , membrane , biochemistry , physics , organic chemistry , chromatography , nuclear physics , engineering
Bilayers of TiO 2 /Ti 3 Al and TiO 2 /TiAl were heated up to 973 K. The resulting concentration–depth profiles were determined using Auger electron spectroscopy in combination with ion sputtering. By applying target‐factor analysis it was possible to distinguish between different states of chemical bonding of the elements analysed. In both TiO 2 /Ti 3 Al and TiO 2 /TiAl heating causes decomposition of titanium dioxide at the bilayer interface, as revealed by the associated oxygen diffusion into the metallic layer. In a certain depth range near to the original bilayer, interface oxygen is bonded to both Ti and Al. In the original Ti 3 Al layer oxygen dissolves homogeneously, whereas Al 2 O 3 was formed in the original TiAl layer, particularly in the central region. Copyright © 2000 John Wiley & Sons, Ltd.