Premium
Short Communication SIMS study of GaAsN/GaAs multiple quantum wells
Author(s) -
Kudriavtsev Yu.,
Villegas A.,
Godines A.,
Ecker P.,
Asomoza R.,
Nikishin S.,
Jin C.,
Faleev N.,
Temkin H.
Publication year - 2000
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/1096-9918(200006)29:6<399::aid-sia880>3.0.co;2-x
Subject(s) - secondary ion mass spectrometry , transmission electron microscopy , quantum well , nitrogen , superposition principle , ion , analytical chemistry (journal) , diffusion , chemistry , materials science , nanotechnology , optics , laser , physics , organic chemistry , chromatography , quantum mechanics , thermodynamics
Depth profiling of GaAsN/GaAs multiple quantum well structures has been performed by SIMS. It is shown that the experimental depth resolution does not depend on the kind of primary ions and improves proportionally with a decrease of the primary ion energy. The SIMS results are compared with data of x‐ray analysis of nitrogen concentration in GaAsN layers and with transmission electron microscopy analysis of the thickness of the layers. Taking into account the mechanism of GaAsN layer formation, experimental SIMS depth profiles of nitrogen are interpreted as resulting from a superposition of ultrathin GaAsN layers of thickness ∼2.5 nm and diffusion profiles of ‘excess’ nitrogen formed during nitridation. Copyright © 2000 John Wiley & Sons, Ltd.