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In‐Situ Source–Template–Interface Reaction Route to Semiconductor CdS Submicrometer Hollow Spheres
Author(s) -
Huang J.,
Xie Y.,
Li B.,
Liu Y.,
Qian Y.,
Zhang S.
Publication year - 2000
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/(sici)1521-4095(200006)12:11<808::aid-adma808>3.0.co;2-p
Subject(s) - materials science , spheres , photoluminescence , in situ , interface (matter) , semiconductor , quantum dot , nanotechnology , sulfur , template method pattern , optoelectronics , composite material , contact angle , chemistry , organic chemistry , metallurgy , physics , astronomy , sessile drop technique
Submicrometer hollow spheres of CdS are produced here (see Figure) in a one‐pot in‐situ source–template–interface reaction (ISTIR)—thus named because CS 2 plays both the role of sulfur source and template and the main reaction region is at the CS 2 –water interface. Examination of the photoluminescence spectrum of these spheres indicates quantum confinement.