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Large‐Scale Catalytic Synthesis of Crystalline Gallium Nitride Nanowires
Author(s) -
Chen C.C.,
Yeh C.C.
Publication year - 2000
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/(sici)1521-4095(200005)12:10<738::aid-adma738>3.0.co;2-j
Subject(s) - nanowire , materials science , gallium nitride , gallium , indium , photoluminescence , crystallite , nanotechnology , catalysis , nitride , optoelectronics , layer (electronics) , metallurgy , chemistry , biochemistry
GaN nanowires for high‐efficiency optoelectronic devices? The simple method for the large‐scale production of GaN nanowires presented here may bring us one step closer. Gallium and ammonia are reacted, using polycrystalline indium powder as a catalyst, to produce wire‐like structures (see Figure) that show strong photoluminescence of the nanowires in the UV region.