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Double‐Sided Mesoporous Silicon Formation for Thermal Insulating Applications
Author(s) -
Lysenko V.,
Remaki B.,
Barbier D.
Publication year - 2000
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/(sici)1521-4095(200004)12:7<516::aid-adma516>3.0.co;2-g
Subject(s) - materials science , wafer , monocrystalline silicon , silicon , mesoporous material , homogeneous , thermal , thermal insulation , anodizing , silicon on insulator , optoelectronics , yield (engineering) , nanotechnology , composite material , layer (electronics) , catalysis , aluminium , biochemistry , chemistry , physics , meteorology , thermodynamics
A technique for the double‐sided formation of bulk mesoporous silicon (meso‐PS) is described. It is shown that pulsed anodization of silicon wafers in a double‐tank cell affords quasi‐homogeneous bulk meso‐PS throughout the thickness of the monocrystalline Si wafer (see Figure). The PS can then be selectively etched from one side of the structure to yield thick PS membranes for thermal insulation applications.