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General Synthesis of Compound Semiconductor Nanowires
Author(s) -
Duan X.,
Lieber C. M.
Publication year - 2000
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/(sici)1521-4095(200002)12:4<298::aid-adma298>3.0.co;2-y
Subject(s) - nanowire , materials science , semiconductor , nanometre , ternary operation , nanotechnology , nanoscopic scale , compound semiconductor , binary number , range (aeronautics) , optoelectronics , layer (electronics) , epitaxy , composite material , arithmetic , mathematics , computer science , programming language
A broad range of multicomponent semiconductor nanowires (see also cover) has been synthesized using laser‐assisted catalytic growth (LCG). Nanowires of binary group III–V materials, ternary III–V materials, binary II–VI compounds, and binary SiGe alloys have been prepared in bulk quantities as high‐purity (> 90 %) single crystals. The nanowires have diameters varying from three to tens of nanometers, and lengths extending to tens of micrometers. The synthesis of this wide range of technologically important semiconductor nanowires can be extended to many other materials and opens up significant opportunities in nanoscale science and technology.