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Quantum‐Confined Gallium Nitride in MCM‐41
Author(s) -
Winkler H.,
Birkner A.,
Hagen V.,
Wolf I.,
Schmechel R.,
Seggern H. von,
Fischer R. A.
Publication year - 1999
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/(sici)1521-4095(199912)11:17<1444::aid-adma1444>3.0.co;2-h
Subject(s) - materials science , nanoscopic scale , molecular sieve , zeolite , gallium nitride , semiconductor , gallium , nitride , nanotechnology , aqueous solution , chemical engineering , optoelectronics , catalysis , organic chemistry , layer (electronics) , metallurgy , chemistry , engineering
Filling the pores of molecular sieves is a way to achieve regular nanoscale arrays of materials at drastically reduced production costs. The loading of zeolite MCM‐41with semiconductor GaN is reported here for the first time using the triazidogallium precursor shown in the Figure. The loading process and the subsequent conversion into GaN are thus possible in a non‐aqueous medium and can be conveniently followed by IR.