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Recent Progress in Molecular Beam Epitaxy of HgCdTe
Author(s) -
He Li,
Yang Jianrong,
Wang Shanli,
Wu Yan,
Fang Weizheng
Publication year - 1999
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/(sici)1521-4095(199909)11:13<1115::aid-adma1115>3.0.co;2-z
Subject(s) - molecular beam epitaxy , materials science , dislocation , optoelectronics , epitaxy , detector , nanotechnology , optics , composite material , physics , layer (electronics)
The recent progress in molecular beam epitaxy (MBE) growth of HgCdTe at the Epitaxy Research Center for Advanced Materials, and the National Laboratory for Infrared Physics is briefly reviewed. We have found that excellent compositional uniformity and reproducibility of HgCdTe can be achieved by the MBE technique. The results of surface morphology, dislocation density, electrical properties and focal plane array detectors are described in this paper.