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Solvothermal Synthesis of Nanocrystalline III–V Semiconductors
Author(s) -
Qian Yitai
Publication year - 1999
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/(sici)1521-4095(199909)11:13<1101::aid-adma1101>3.0.co;2-o
Subject(s) - materials science , nanocrystalline material , semiconductor , solvothermal synthesis , nanotechnology , compound semiconductor , engineering physics , chemical engineering , optoelectronics , epitaxy , engineering , layer (electronics)
A simple, convenient approach to III–V semiconducting nanocrystallites is described—the solvothermal method. Similar to the hydrothermal method, except that organic solvents are used instead of water, this method is reported to effectively prevent oxidation of the products. Materials such as 12 nm InP, 32 nm GaN, and 12 nm InAs can be prepared via this method, resulting in crystalline materials that do not need post‐treatment at high temperatures. In addition, organometallic precursors are not required.