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A Novel Chemical Route to ZnTe Semiconductor Nanorods
Author(s) -
Li Yadong,
Ding Yi,
Wang Zhaoyu
Publication year - 1999
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/(sici)1521-4095(199907)11:10<847::aid-adma847>3.0.co;2-b
Subject(s) - nanorod , materials science , semiconductor , nanotechnology , compound semiconductor , optoelectronics , epitaxy , layer (electronics)
ZnTe is an attractive material for various opto‐electronic devices ; however, conventional methods of preparation of nanocrystalline metal tellurides have the limitation of requiring noxious compounds, such as H 2 Te, or organometallic compounds. Here is reported a solvothermal synthesis for ZnTe, using Zn and Te, with hydrazine hydrate as the solvent. The method was found to produce well‐crystallized nanorods in 80–90% yield and to be strongly solvent dependent, in that the hydrazine acts not only as an electron transfer medium, but also as a strong electron donor.