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A Novel Low‐Temperature Synthetic Route to Crystalline Si 3 N 4
Author(s) -
Tang Kaibin,
Hu Junqing,
Lu Qingyi,
Xie Yi,
Zhu Jingsheng,
Qian Yitai
Publication year - 1999
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/(sici)1521-4095(199906)11:8<653::aid-adma653>3.0.co;2-e
Subject(s) - materials science , creep , transmission electron microscopy , composite material , nanotechnology , chemical engineering , engineering
A low‐temperature preparation of crystalline Si 3 N 4 is described that avoids the temperatures above 1200 °C necessary in other methods. Si 3 N 4 s chemical stability, high‐temperature strength, and excellent creep resistance make it a promising material for high‐temperature engineering applications. The Figure shows a transmission electron microscopy image of a Si 3 N 4 sample.