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Silicon‐Germanium Strained Layer Materials in Microelectronics
Author(s) -
Paul Douglas J.
Publication year - 1999
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/(sici)1521-4095(199903)11:3<191::aid-adma191>3.0.co;2-3
Subject(s) - microelectronics , materials science , silicon , layer (electronics) , germanium , silicon germanium , engineering physics , nanotechnology , optoelectronics , engineering
Review: The use of Si 1 – x Ge x in microelectronics production is appealing not only because it is compatible with existing industrial technology used for the production of silicon‐based microelectronics, but also because the induced strain caused by insertion of a layer of Si 1 –x Ge x (see Figure) can significantly improve their performance. The production and properties of these new materials are reviewed.