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Evidence of Aggregation‐Induced Copper Immobilization During Polyimide Metallization
Author(s) -
Kiene Michael,
Strunskus Thomas,
Peter Ralf,
Faupel Franz
Publication year - 1998
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/(sici)1521-4095(199811)10:16<1357::aid-adma1357>3.0.co;2-9
Subject(s) - polyimide , materials science , copper , microelectronics , miniaturization , polymer , x ray photoelectron spectroscopy , aluminium , metal , diffusion barrier , electromigration , diffusion , nanotechnology , composite material , metallurgy , chemical engineering , layer (electronics) , physics , engineering , thermodynamics
Research on metal diffusion into polymers and metal–polymer interfaces is mainly stimulated by applications of polyimide in microelectronics packaging and at the chip level. Since copper will increasingly replace aluminum in such applications as a result of miniaturization, the interfacial behavior of copper is of great importance. The authors use combined X‐ray photoelectron spectroscopy and transmission electron microscopy to show that copper does not diffuse into polyimide from a continuous film. Strong diffusion of Cu is shown to require extremely low deposition rates, far below those of practical importance.