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Etching of ZnO Films with Hexafluoroacetylacetone
Author(s) -
Droes Steven R.,
Kodas Toivo T.,
HampdenSmith Mark J.
Publication year - 1998
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/(sici)1521-4095(199810)10:14<1129::aid-adma1129>3.0.co;2-i
Subject(s) - materials science , etching (microfabrication) , dry etching , metal , reactive ion etching , chemical engineering , nanotechnology , metallurgy , layer (electronics) , engineering
A dry route to etching metal oxides at low temperatures (<200°C) using gaseous β‐diketones is described. The Figure is an SEM micrograph of a ZnO film after etching. This method is a promising alternative to current wet‐etching and cleaning methods as easily desorbed, volatile, low‐molecular‐weight metal–organic products are produced.