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Hole Transporting Materials with High Glass Transition Temperatures for Use in Organic Light‐Emitting Devices
Author(s) -
O'Brien Diarmuid F.,
Burrows Paul E.,
Forrest Stephen R.,
Koene Bryan E.,
Loy Douglas E.,
Thompson Mark E.
Publication year - 1998
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/(sici)1521-4095(199810)10:14<1108::aid-adma1108>3.0.co;2-s
Subject(s) - materials science , oled , biphenyl , glass transition , optoelectronics , ionization , photochemistry , nanotechnology , polymer , composite material , organic chemistry , layer (electronics) , ion , chemistry
Efficient and stable organic light‐emitting devices (OLEDs) can be fabricated using hole transporting materials with a high glass transition temperature ( T g ), as reported here. A series of devices utilizing high T g hole transporting layers, consisting of compounds with a biphenyl backbone such as the one shown in the Figure, are investigated with respect to their I – V characteristics, external quantum efficiencies, ionization potentials, and electron affinities.