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Detonation Chemistry: A New Access to Nanocrystalline Gallium Nitride
Author(s) -
Frank Alissa C.,
Fischer Roland A.
Publication year - 1998
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/(sici)1521-4095(199808)10:12<961::aid-adma961>3.0.co;2-o
Subject(s) - materials science , gallium nitride , detonation , nanocrystalline material , gallium , nanochemistry , nanotechnology , nitride , nanocrystal , metallurgy , organic chemistry , explosive material , chemistry , layer (electronics)
One of the most promising materials for advanced optoelectronics and high power devices is gallium nitride (GaN). This potential, due to a unique combination of properties, makes a rational synthesis of nanosized GaN highly desirable. It has been found that gallium azides might offer a solution to this problem, since GaN nanocrystallites in a size range from 2 nm to 3000 nm can be prepared by detonations of gallium azides, the detonation energy determining the size of the nanocrystallites. Thus, explosivity, a commonly unwanted property, opens up opportunities for nanochemistry.