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High Quantum Efficiency Polythiophene
Author(s) -
Roman Lucimara S.,
Mammo Wendimagen,
Pettersson Leif A. A.,
Andersson Mats R.,
Inganäs Olle
Publication year - 1998
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/(sici)1521-4095(199807)10:10<774::aid-adma774>3.0.co;2-j
Subject(s) - polythiophene , materials science , photodiode , quantum efficiency , active layer , optoelectronics , layer (electronics) , electrode , polymer , conductive polymer , nanotechnology , composite material , chemistry , thin film transistor
Which factors affect the device efficiency of PEOPT/C 60 photodiodes (where PEOPT is a polythiophene derivative) most strongly? In order to answer this question, the performance of five‐layer sandwich structure PEOPT/C 60 photodiodes with different layer thicknesses has been studied. It is shown that the device efficiency is strongly connected with the geometry of the device and the optical field distribution rather than the quantity of active material. Optimization of the thickness of both the C 60 layer and the polymer electrode layer can enhance performance.