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Nanoscale Semiconductor Interface Characterization by Photo‐STM
Author(s) -
Hiesgen Renate,
Meissner Dieter
Publication year - 1998
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/(sici)1521-4095(199805)10:8<619::aid-adma619>3.0.co;2-d
Subject(s) - semiconductor , materials science , scanning tunneling microscope , photocurrent , nanoscopic scale , characterization (materials science) , interface (matter) , nanometre , nanotechnology , optoelectronics , quantum tunnelling , surface photovoltage , resolution (logic) , computer science , physics , spectroscopy , capillary number , capillary action , composite material , quantum mechanics , artificial intelligence
Photovoltage images of semiconductor surfaces , obtained using a scanning tunneling microscope (STM), can provide valuable information about the electronic properties of the semiconductor interface. The advantages of photo‐STM, a technique that enables images of the photocurrent together with the topography of a semiconductor sample to be recorded using a commercial STM, are discussed. For example, direct observation of different physical phenomena with nanometer resolution is possible and space‐charge regions can easily be detected.