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In Situ Preparation of Bulk Crystals with Regularly Doped Structures
Author(s) -
Kurlov Vladimir N.,
Belenko Svetlana V.
Publication year - 1998
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/(sici)1521-4095(199805)10:7<539::aid-adma539>3.0.co;2-a
Subject(s) - materials science , dopant , doping , in situ , enhanced data rates for gsm evolution , period (music) , nanotechnology , optoelectronics , crystallography , telecommunications , chemistry , physics , computer science , acoustics , meteorology
Crystals with regularly doped structures , particularly those with periodic structures of variable composition, are promising materials for optoelectronic devices. Two techniques for the in‐situ preparation of modulated structures are reported—the edge‐defined film‐fed growth (EFG) method, and the growth from an element of shape (GES) method. These techniques make it possible to control the contrast, period, and ratio heights of doped and undoped regions in a period, as well as the character of dopant distribution within the period.