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The Origin of Electroluminescence at Porous p‐Silicon Layers–Electrolyte Interfaces
Author(s) -
Moreno J. David,
GuerreroLemus Ricardo,
MartínezDuart José M.,
Marcos M. Luisa,
GonzálezVelasco Jaime
Publication year - 1998
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/(sici)1521-4095(199801)10:1<38::aid-adma38>3.0.co;2-z
Subject(s) - electroluminescence , materials science , porous silicon , silicon , electrolyte , hydrogen peroxide , anode , radical , porosity , aqueous solution , photochemistry , electrochemistry , chemical engineering , nanotechnology , optoelectronics , composite material , electrode , organic chemistry , layer (electronics) , chemistry , engineering
The electroluminescent properties of p‐type porous silicon layers (p‐PSLs) in aqueous solutions can be significantly improved by the presence of hydrogen peroxide, as demonstrated by the electroluminescence (EL) and electrochemical results presented. The possible species responsible for electron injection into the conduction band of porous silicon—necessary for EL—are discussed in the light of these results. Particular attention is paid to the possibilities of formation of HO 2 during anodic treatments of p‐PSLs or a reaction involving OH radicals and Si–H bonds.