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Surface Chemical Bonding States and Ferroelectricity of Pb(Zr 0.52 Ti 0.48 )O 3 Thin Films
Author(s) -
Cho C.R.
Publication year - 2000
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/(sici)1521-4079(200001)35:1<77::aid-crat77>3.0.co;2-v
Subject(s) - ferroelectricity , x ray photoelectron spectroscopy , lead zirconate titanate , materials science , thin film , dielectric , coercivity , analytical chemistry (journal) , dissipation factor , chemical state , hysteresis , polarization (electrochemistry) , annealing (glass) , nuclear magnetic resonance , condensed matter physics , composite material , nanotechnology , chemistry , optoelectronics , physics , chromatography
The surface chemical bonding states and the ferroelectric properties of sol‐gel deposited lead zirconate titanate [Pb(Zr 0.52 Ti 0.48 )O 3 , PZT] thin films coated on (111)Pt/Ti/SiO 2 /Si substrates were investigated. X‐ray photoelectron spectroscopy (XPS) was used to determine the oxidation state of the surface and the chemical composition as a function of depth in ferroelectric PZT thin layers. Values for the dielectric constant and dissipation factor at 1 kHz for the 300 nm‐thick film were 1214 and 0.014 for the film annealed at 520 °C, and 881 and 0.015 for a film annealed at 670 °C. Measured values for the remanent polarization (P r ) and coercive field (E c ), from polarization‐electric field (P‐E) hysteresis loops biased at 10 V at a frequency of 100 Hz, were 16.7, 14.4 μC/cm 2 and 60, 41.7 kV/cm for 520 °C and 670 °C. The leakage current density (J) was 72 and 96 nA/cm 2 at an applied field of 100 kV/cm. It was found that the bonding states of lead and oxygen in the surface regions could be correlated with the ferroelectric properties of the integrated thin layers.