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Electrical and Optical Characterization of Oxygen doped CuInSe 2 Crystals
Author(s) -
Albornoz J. G.,
Wasim S. M.,
Rincón C.
Publication year - 1999
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/(sici)1521-4079(199911)34:9<1191::aid-crat1191>3.0.co;2-m
Subject(s) - acceptor , oxygen , doping , lattice (music) , activation energy , chemistry , absorption (acoustics) , absorption spectroscopy , analytical chemistry (journal) , inorganic chemistry , materials science , optoelectronics , condensed matter physics , optics , organic chemistry , physics , acoustics , composite material
From a combined study of the electrical properties between room temperature and 77 K and optical absorption at 300 K of bulk CuInSe 2 samples doped with different oxygen concentrations, two shallow acceptor levels are found. The activation energy E A1 and E A2 of these levels in the dilute limit tends to be around 30 and 36 meV, respectively. The increase of E A1 and decrease of E A2 with the increase of oxygen content can be explained consistently on the basis that the ratio of Cu to In atoms increases with the increase of oxygen incorporated into CuInSe 2 lattice.