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Microhardness of 6H‐SiC Epitaxial Layers Grown by Sublimation
Author(s) -
KakanakovaGeorgieva A.,
Trifonova E. P.,
Yakimova R.,
MacMillan M. F.,
Janzen E.
Publication year - 1999
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/(sici)1521-4079(199909)34:8<943::aid-crat943>3.0.co;2-o
Subject(s) - knoop hardness test , indentation hardness , sublimation (psychology) , materials science , epitaxy , substrate (aquarium) , layer (electronics) , composite material , analytical chemistry (journal) , mineralogy , chemistry , microstructure , geology , chromatography , psychology , oceanography , psychotherapist
Knoop microhardness of 6H‐SiC layers grown by sublimation epitaxy was investigated. The microhardness‐load curves for all of the samples were measured and then used to extract the load‐independent microhardness values. The relationships of these values to the growth time and growth rate were studied. The microhardness‐depth profiles indicated that the layer/substrate interface region had a microhardness value that differed significantly from that of both the epi‐layer and the substrate.