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Characterization of Pr 2 O 3 Added Metals/GaAs Schottky Diodes using X‐ray Photoelectron Spectroscopy
Author(s) -
Wang H. T.,
Chang L. B.,
Cheng Y. C.,
Lin Y. K.,
Hsu C. I G.
Publication year - 1999
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/(sici)1521-4079(199909)34:8<1017::aid-crat1017>3.0.co;2-n
Subject(s) - x ray photoelectron spectroscopy , schottky diode , schottky barrier , materials science , epitaxy , diode , analytical chemistry (journal) , fermi level , chemical state , optoelectronics , chemistry , nanotechnology , nuclear magnetic resonance , physics , layer (electronics) , chromatography , quantum mechanics , electron
In this research, the surface chemical structures of Pr 2 O 3 doped Liquid Phase Epitaxy (LPE) layers were investigated by X‐ray Photoelectron Spectroscopy (XPS). The bonding energies of these grown surfaces are studied under various adding conditions. The comparisons of these surface chemical structures were used to explain the evolutions of the grown surfaces with their effects on the Schottky barrier height. Because the surface states are lowered and the Fermi level is not pinned, these metals(Au, Ag, Ni, Pt)/GaAs Schottky structures all show an improved diode performance by adding Pr 2 O 3 . The resulting barrier height and ideality factor, as estimated by the current‐voltage measurement, can be as high as 0.94+‐0.02 eV and as unitary as 1.03+‐0.01, respectively.