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Effect of Doping and Irradiation on Optical Parameters of Triglycine Sulphate Single Crystals
Author(s) -
Gaffar M. A.,
Abu ElFadl A.
Publication year - 1999
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/(sici)1521-4079(199908)34:7<915::aid-crat915>3.0.co;2-w
Subject(s) - attenuation coefficient , irradiation , dielectric , refractive index , molar absorptivity , doping , materials science , radiation , analytical chemistry (journal) , band gap , absorption (acoustics) , triglycine sulfate , optics , chemistry , optoelectronics , ferroelectricity , composite material , physics , chromatography , nuclear physics
Crystals of triglycine sulphate (TGS) doped with orthonitroaniline (ONA) irradiated with different doses of gamma‐radiation were used to investigate gamma‐radiation effect on electrical and optical parameters. The absorption coefficient and the reflectance were measured and hence the extinction coefficient, the optical refractive index and the dielectric constants (e r ′, e r ″) of unirradiated and irradiated TGS crystals were calculated. Values of the allowed indirect optical energy gap E g opt. of TGS doped with ONA were calculated as a function of gamma‐dose. Value of E g opt. decreases from 4.72 eV to 4.25 eV with increasing gamma‐doses from 0 up to 3 Mrad. The values of the static dielectric constant e r (0) and the effective electrical conductivity sigma 0 at room temperature and their dependence on gamma‐dose were also calculated.