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Some Phase Boundary Region Correlations in the Liquid Phase Epitaxy Growth Process
Author(s) -
Peev N. S.
Publication year - 1999
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/(sici)1521-4079(199908)34:7<851::aid-crat851>3.0.co;2-#
Subject(s) - epitaxy , liquid phase , phase (matter) , phase boundary , process (computing) , materials science , boundary (topology) , condensed matter physics , thermodynamics , chemistry , physics , nanotechnology , mathematics , computer science , organic chemistry , layer (electronics) , mathematical analysis , operating system
In the present work the behavior of n‐component liquid phase during the liquid phase epitaxial growth process is considered. As it follows from these considerations, in the liquid phase epitaxy growth one must distinguish two types of components ‐ with a positive concentration gradient and with negative concentration gradient. A possible mechanism for deposition of the components having a negative concentration gradients, for which, in general, the liquid phase is superheated, is presented.