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New Heterostructures n‐PbS/n‐ZnSe: Long‐Term Stability of Electrical Characteristics
Author(s) -
Khlyap G.,
Andrukhiv M.
Publication year - 1999
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/(sici)1521-4079(199906)34:5/6<751::aid-crat751>3.0.co;2-8
Subject(s) - heterojunction , zinc selenide , materials science , substrate (aquarium) , capacitance , optoelectronics , selenide , zinc , voltage , chemistry , electrical engineering , selenium , electrode , metallurgy , engineering , geology , oceanography
The long‐term stability of electrical parameters had been investigated for heterostructures based on lead sulphide films and zinc selenide during 3.5 years samples storage at normal ambient conditions. In order to clarify the time stability of electrical properties characterized the examined heterostructures the investigations of current‐voltage and capacitance‐voltage dependencies were performed. It was found that the heterostructures characterized by the carrier concentration of ZnSe substrate in range of (1.5‐3.5)x10 17 cm ‐3 manifested more stable current‐voltage behavior than the heterostructures with the lower carrier concentration of the ZnSe substrate.