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Silicon‐Based Heterostructures: Strained‐Layer Growth by Molecular Beam Epitaxy
Author(s) -
Herman M. A.
Publication year - 1999
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/(sici)1521-4079(199906)34:5/6<583::aid-crat583>3.0.co;2-x
Subject(s) - heterojunction , molecular beam epitaxy , epitaxy , materials science , silicon , optoelectronics , layer (electronics) , nanotechnology , engineering physics , physics
The structural properties as well as epitaxial growth peculiarities of thin film silicon‐based heterostructures (SBH) are described with emphasis put on MBE growth of these structures. More detailed considerations are presented for the strained‐layer Si 1‐x Ge x /Si heterostructures. The 4.17% lattice mismatch between Si and Ge is the reason for considering the Si‐based heteroepitaxy realised with the Si 1‐x Ge x alloy as strained‐layer epitaxy. Consequently, the effects of strain on epitaxial growth and on properties of Si 1‐x Ge x /Si heterostructures are also described and discussed in this paper. The review is concluded with a discussion on key issues concerning the important 2D layer‐by‐layer growth mode in strained‐layer MBE of SBHs. The considerations are based on current understanding of physical principles of epitaxial growth of these thin film structures.