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Epitaxial Lateral Overgrowth of GaAs: Principle and Growth Mechanism
Author(s) -
Zytkiewicz Z. R.
Publication year - 1999
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/(sici)1521-4079(199906)34:5/6<573::aid-crat573>3.0.co;2-0
Subject(s) - epitaxy , supersaturation , materials science , liquid phase , mechanism (biology) , orientation (vector space) , crystal growth , optoelectronics , condensed matter physics , crystallography , chemistry , nanotechnology , thermodynamics , layer (electronics) , geometry , physics , mathematics , organic chemistry , quantum mechanics
The results on growth mechanism of GaAs layers by epitaxial lateral overgrowth (ELO) technique from the liquid phase are reviewed. In particular, effects of melt supersaturation, seed orientation, density of surface steps and growth temperature on properties of ELO layers are discussed. It is shown that the results obtained are not a specific attribute of LPE ELO growth of GaAs layers on GaAs substrates but represent a more general phenomena encountered during the ELO growth of other epitaxial systems.