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Liquid Phase Epitaxial Growth and Properties of InSbBi Films grown from In, Bi and Sn Solutions
Author(s) -
Gao Y. Z.,
Yamaguchi T.
Publication year - 1999
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/(sici)1521-4079(199903)34:3<285::aid-crat285>3.0.co;2-e
Subject(s) - epitaxy , electron microprobe , materials science , transmission electron microscopy , analytical chemistry (journal) , van der pauw method , phase (matter) , transmittance , scanning electron microscope , chemistry , optoelectronics , nanotechnology , layer (electronics) , hall effect , metallurgy , composite material , electrical resistivity and conductivity , chromatography , engineering , organic chemistry , electrical engineering
InSb 1‐x Bi x (0.01< x< 0.14) epi‐layers were grown from In, Bi and Sn solutions by liquid phase epitaxy (LPE) technique on (100) InSb substrates. The InSbBi films were characterized by optical microscopy, electron‐probe micro analysis (EPMA), Van der Pauw and FTIR transmission measurements. The surface morphology and the transmittance spectra of the epi‐layers were strongly related to the cooling rate of the solutions during growth. Sn and Bi metal particles were appeared on the surface of the InSbBi films grown from Sn solution with a cooling rate of 3K/min and a sharp decrease of transmittance was observed in the wavelength range longer than 14 μm for the epi‐layers with cooling rate of 1.5K/min. A room temperature electron mobility of 3.06 x 10 4 cm 2 /Vs with a carrier density of 6 x 10 18 cm ‐3 for the InSbBi films have been obtained indicating a high quality of the epi‐layers.