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Synthetic Diamond — Basic Research and Applications
Author(s) -
Sauer R.
Publication year - 1999
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/(sici)1521-4079(199902)34:2<227::aid-crat227>3.0.co;2-y
Subject(s) - diamond , chemical vapor deposition , materials science , optoelectronics , fabrication , doping , schottky diode , thermal conductivity , diode , silicon , nanotechnology , composite material , medicine , alternative medicine , pathology
Non‐equilibrium growth of synthetic diamond layers by chemical vapour deposition (CVD) techniques on heterosubstrates has largely been improved over the past decade. On silicon substrates highly textured and oriented diamond films can be grown with optical transparencies and thermal conductivities suitable for broad‐band optical windows and heat spreaders. Boron pulse‐doping of homoepitaxial diamond layers leads to high p‐conductivity at room temperature allowing the fabrication of Schottky diodes and field effect transistors operating at temperatures up to 1000 K. Other devices such as sensors and detectors are being successfully fabricated. At the same time many basic questions remain to be solved including efficient n‐type doping.