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Self‐Assembled Germanium‐Dot Multilayers Embedded in Silicon
Author(s) -
Bauer G.,
Darhuber A. A.,
Holý V.
Publication year - 1999
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/(sici)1521-4079(199902)34:2<197::aid-crat197>3.0.co;2-a
Subject(s) - germanium , silicon , materials science , quantum dot , nanotechnology , optoelectronics , germanium compounds
We report mainly on structural investigations on nanoscale Ge rich islands, the growth of which is driven by misfit strain (Stranski‐Krastanow growth mode). Results of several methods, i.e. atomic force microscopy, transmission electron microscopy, and mainly x‐ray diffraction and x‐ray reflectivity measurements are presented and discussed.