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Determination of the Mean Absorption Potential of Si for Electrons by Energy Loss Spectroscopy
Author(s) -
Uchida Y.,
Spillecke O.,
Lehmpfuhl G.,
Preusser A.,
Weiss K.,
Schlögl R.
Publication year - 1999
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/(sici)1521-4079(199901)34:1<103::aid-crat103>3.0.co;2-t
Subject(s) - absorption (acoustics) , atomic physics , diffraction , electron energy loss spectroscopy , spectroscopy , electron diffraction , chemistry , electron , absorption spectroscopy , silicon , plasmon , optics , analytical chemistry (journal) , molecular physics , physics , transmission electron microscopy , organic chemistry , chromatography , quantum mechanics
Complex structure potentials of silicon for 111 systematic diffraction were measured by convergent beam electron diffraction technique (Kossel ‐ Möllenstedt pattern). The imaginary mean potential and its different components were determined directly by measuring the energy loss spectra of transmitted elctrons by means of an imaging filter (GIF) installed in the electron microscope. The imaginary mean inner potential was estimated to be 0.63 eV. The component of the imaginary inner potential due to plasmon excitation was estimated to be 0.53 eV. Some low indexed Fourier components were determined by matching intensity simulations to Kossel‐Möllenstedt patterns. The absorption potential due to thermal vibration was found to be in the order of the full Einstein model.