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Polycrystalline Synthesis and Single Crystal Growth of AgGaS 2
Author(s) -
Zhao BeiJun,
Zhu ShiFu,
Yu FengLiang,
Li HongYu,
Gao DeYou,
Li ZhengHui
Publication year - 1998
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/(sici)1521-4079(1998)33:6<943::aid-crat943>3.0.co;2-k
Subject(s) - ingot , crystallite , materials science , single crystal , diffraction , crystal (programming language) , crystallography , analytical chemistry (journal) , metallurgy , chemistry , optics , programming language , physics , alloy , chromatography , computer science
A modified two temperature vapor transport procedure has been used to synthesize AgGaS 2 polycrystalline materials at 1060 °C from high‐purity Ag, Ga, S elements. The results showed that the polycrystalline materials are pure single phase AgGaS 2 by X‐ray powder diffraction analysis. The polycrystalline ingot includes a few interior voids and has a high mass density. The AgGaS 2 ingot with 12 mm in diameter and 20 mm in length has been grown by the modified Bridgman technique in two‐zone vertical furnace. As‐grown AgGaS 2 ingot was characterized by the X‐ray diffraction technique, obtained the rocking curve of the crystal (011) face, it is shown that the ingot is AgGaS 2 single crystal. The infrared transparent of the crystal at 2 ∼ 10μm is 49% (and absorption coefficient is 0.74 cm —1 ).