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Thermosolutal Convection during Vertical B RIDGMAN Growth of Semiconductor Melts
Author(s) -
Seifert W.,
Reinshaus P.,
Bachran A.
Publication year - 1998
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/(sici)1521-4079(1998)33:6<899::aid-crat899>3.0.co;2-h
Subject(s) - ampoule , convection , prandtl number , semiconductor , mechanics , thermal , residual , natural convection , temperature gradient , chemistry , materials science , thermodynamics , mineralogy , physics , composite material , meteorology , mathematics , optoelectronics , algorithm
An attempt is made to investigate the influence of the solutal effect on convection in BiSbTe 3 melts as a representative for semiconductor melts of low P RANDTL number. Calculations have been performed for a 3D B RIDGMAN configuration applying an experimentally measured temperature profile at the outer surface of the ampoule. The FIDAP TM FEM code was used to solve the transient hydrodynamic moving‐boundary problem. Results are presented for the excessive tellurium as a melt component as well as for an additive lead doping. It is shown that, according to the growth conditions, the melt components differently contribute to the thermosolutal convection. For Bridgman growth experiments in space, arbitrary orientations of the ampoule axis with respect to the residual gravity vector can occur. Calculations have been performed for certain orientations (angles) at a constant microgravity level. They show an influence of the solutal effect only for large deviations of the ampoule axis from the direction of the residual gravity vector.