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Growth of Ge 1—x Si x ( x = 0 to 0.5) Single Crystals by a Zone Melting Method
Author(s) -
Barz A.,
Kerat U.,
Dold P.,
Benz K. W.
Publication year - 1998
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/(sici)1521-4079(1998)33:6<849::aid-crat849>3.0.co;2-0
Subject(s) - wedge (geometry) , crystallography , materials science , analytical chemistry (journal) , chemistry , physics , optics , chromatography
Ge 1—x Si x graded crystals with 0 < x < 0.66 were grown by a zone melting method in a double ellipsoid mirror furnace. They have a diameter of 9 mm and grown lengths between 27 and 80 mm. Single crystalline regions reached a maximum Si concentration of 50 at%, determined by EDX and ECP measurements. Starting with a Ge seed, a defined concentration profile was obtained by a wedge‐shaped arrangement of the feed material. The concentration profiles could be predicted by a simulation program.