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Analysis of Changes in the Intensity of the Intrinsic Luminescence after the Copper Diffusion into Semi‐Insulating Undoped GaAs Crystals
Author(s) -
Glinchuk K. D.,
Prokhorovich A. V.,
Vorobkalo F. M.
Publication year - 1998
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/(sici)1521-4079(1998)33:5<833::aid-crat833>3.0.co;2-t
Subject(s) - luminescence , copper , diffusion , intensity (physics) , materials science , excitation , analytical chemistry (journal) , chemistry , optoelectronics , optics , thermodynamics , physics , metallurgy , chromatography , quantum mechanics
An analysis is made of the effect of the copper diffusion into semi‐insulating undoped GaAs crystals on the intensity of the intrinsic luminescence. It is shown that the copper diffusion into semi‐insulating undoped GaAs crystals could lead both to an increase and to a decrease in the intrinsic luminescence intensity. Analytical expressions connecting the value and the sign of the effect observed with the recombination parameters of crystals pointed and also with the intensity of luminescence excitation are obtained.